Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
900V
Package Type
HIP-247-3
Series
SCT
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
12mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
138nC
Forward Voltage Vf
2.8V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Automotive Standard
AEC-Q101
Country of Origin
China
Stock information temporarily unavailable.
10.481 OMR
10.481 OMR Each (ex VAT)
11.005 OMR
11.005 OMR Each (inc. VAT)
1
10.481 OMR
10.481 OMR Each (ex VAT)
11.005 OMR
11.005 OMR Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 4 | 10.481 OMR |
| 5+ | 10.167 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
900V
Package Type
HIP-247-3
Series
SCT
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
12mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
138nC
Forward Voltage Vf
2.8V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Automotive Standard
AEC-Q101
Country of Origin
China


