STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

RS Stock No.: 719-468Brand: STMicroelectronicsManufacturers Part No.: SCT018W65G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

8.410 OMR

8.410 OMR Each (ex VAT)

8.830 OMR

8.830 OMR Each (inc. VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

1

Available in multiples of 1
18.410 OMR
216.820 OMR
325.230 OMR
433.640 OMR
540.774 OMR
648.929 OMR
757.084 OMR
865.238 OMR
973.393 OMR
1081.548 OMR
1189.703 OMR
1297.858 OMR
13106.012 OMR
14114.167 OMR
15122.322 OMR

8.410 OMR

8.410 OMR Each (ex VAT)

8.830 OMR

8.830 OMR Each (inc. VAT)

STMicroelectronics SCT N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 3-Pin HIP-247-3 SCT018W65G3AG

Stock information temporarily unavailable.

1

Available in multiples of 1
18.410 OMR
216.820 OMR
325.230 OMR
433.640 OMR
540.774 OMR
648.929 OMR
757.084 OMR
865.238 OMR
973.393 OMR
1081.548 OMR
1189.703 OMR
1297.858 OMR
13106.012 OMR
14114.167 OMR
15122.322 OMR

QuantityUnit price
1 - 48.410 OMR
5+8.155 OMR

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

HIP-247-3

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

398W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

2.6V

Maximum Operating Temperature

200°C

Width

5.15 mm

Height

20.15mm

Length

15.75mm

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more