Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Series
SiC MOSFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.203 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
239V
Number of Elements per Chip
1
Transistor Material
SiC
Stock information temporarily unavailable.
6,539.500 OMR
6.540 OMR Each (On a Reel of 1000) (ex VAT)
6,866.475 OMR
6.867 OMR Each (On a Reel of 1000) (inc. VAT)
1000
6,539.500 OMR
6.540 OMR Each (On a Reel of 1000) (ex VAT)
6,866.475 OMR
6.867 OMR Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
1200 V
Series
SiC MOSFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.203 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
239V
Number of Elements per Chip
1
Transistor Material
SiC


