Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Country of Origin
China
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
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Stock information temporarily unavailable.
32.310 OMR
32.310 OMR Each (ex VAT)
33.925 OMR
33.925 OMR Each (inc. VAT)
Standard
1
32.310 OMR
32.310 OMR Each (ex VAT)
33.925 OMR
33.925 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 49 | 32.310 OMR |
| 50 - 99 | 28.471 OMR |
| 100 - 249 | 25.588 OMR |
| 250 - 499 | 25.295 OMR |
| 500+ | 25.020 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
1200V
Package Type
H2PAK-7
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
0.065Ω
Channel Mode
Enhancement
Country of Origin
China
Product Details
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties ofwide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
