Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
Product Details
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
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Stock information temporarily unavailable.
17,084.860 OMR
17.085 OMR Each (On a Reel of 1000) (ex VAT)
17,939.103 OMR
17.939 OMR Each (On a Reel of 1000) (inc. VAT)
1000
17,084.860 OMR
17.085 OMR Each (On a Reel of 1000) (ex VAT)
17,939.103 OMR
17.939 OMR Each (On a Reel of 1000) (inc. VAT)
Stock information temporarily unavailable.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Package Type
H2PAK
Series
SCTH90
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
484W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Gate Source Voltage Vgs
22V
Maximum Operating Temperature
175°C
Height
10.4mm
Length
15.25mm
Standards/Approvals
No
Width
4.8mm
Automotive Standard
No
Product Details
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
