SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V

RS Stock No.: 201-0887Brand: STMicroelectronicsManufacturers Part No.: SCTW90N65G2V
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

Hip247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

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14.190 OMR

Each (ex VAT)

14.900 OMR

Each (inc VAT)

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Select packaging type

14.190 OMR

Each (ex VAT)

14.900 OMR

Each (inc VAT)

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
1 - 414.190 OMR
5 - 913.335 OMR
10 - 2412.630 OMR
25 - 4911.915 OMR
50+11.350 OMR

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

Hip247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more