SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120

RS Stock No.: 202-5493Brand: STMicroelectronicsManufacturers Part No.: SCTWA30N120
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

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11.115 OMR

Each (In a Tube of 30) (ex VAT)

11.671 OMR

Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120

11.115 OMR

Each (In a Tube of 30) (ex VAT)

11.671 OMR

Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 45 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTWA30N120
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
30 - 3011.115 OMR333.450 OMR
60+10.560 OMR316.800 OMR

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.09 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

3.5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more