Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK (TO-263)
Series
STripFET F3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Length
10.75mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
214.500 OMR
0.214 OMR Each (On a Reel of 1000) (ex VAT)
225.225 OMR
0.225 OMR Each (On a Reel of 1000) (inc. VAT)
1000
214.500 OMR
0.214 OMR Each (On a Reel of 1000) (ex VAT)
225.225 OMR
0.225 OMR Each (On a Reel of 1000) (inc. VAT)
1000
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Package Type
D2PAK (TO-263)
Series
STripFET F3
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Length
10.75mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.