Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
4.042 OMR
0.808 OMR Each (In a Pack of 5) (ex VAT)
4.244 OMR
0.848 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
4.042 OMR
0.808 OMR Each (In a Pack of 5) (ex VAT)
4.244 OMR
0.848 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.808 OMR | 4.042 OMR |
| 25 - 45 | 0.770 OMR | 3.850 OMR |
| 50 - 120 | 0.693 OMR | 3.465 OMR |
| 125 - 245 | 0.627 OMR | 3.135 OMR |
| 250+ | 0.610 OMR | 3.052 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


