Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
4.391 OMR
0.878 OMR Each (In a Pack of 5) (ex VAT)
4.611 OMR
0.922 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
4.391 OMR
0.878 OMR Each (In a Pack of 5) (ex VAT)
4.611 OMR
0.922 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.878 OMR | 4.391 OMR |
| 25 - 45 | 0.836 OMR | 4.182 OMR |
| 50 - 120 | 0.753 OMR | 3.764 OMR |
| 125 - 245 | 0.681 OMR | 3.405 OMR |
| 250+ | 0.663 OMR | 3.316 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


