Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
4.276 OMR
0.855 OMR Each (In a Pack of 5) (ex VAT)
4.490 OMR
0.898 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
4.276 OMR
0.855 OMR Each (In a Pack of 5) (ex VAT)
4.490 OMR
0.898 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.855 OMR | 4.276 OMR |
| 25 - 45 | 0.807 OMR | 4.036 OMR |
| 50 - 120 | 0.730 OMR | 3.648 OMR |
| 125 - 245 | 0.658 OMR | 3.289 OMR |
| 250+ | 0.622 OMR | 3.110 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Series
STripFET H7
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
14nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


