STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4

RS Stock No.: 687-5068Brand: STMicroelectronicsManufacturers Part No.: STD25NF10LT4
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Technical Document

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

4.730 OMR

0.946 OMR Each (In a Pack of 5) (ex VAT)

4.966 OMR

0.993 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4
Select packaging type

4.730 OMR

0.946 OMR Each (In a Pack of 5) (ex VAT)

4.966 OMR

0.993 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET II Type N-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-252 STD25NF10LT4

Stock information temporarily unavailable.

Select packaging type

QuantityUnit pricePer Pack
5 - 50.946 OMR4.730 OMR
10 - 200.803 OMR4.015 OMR
25 - 950.776 OMR3.878 OMR
100 - 4950.622 OMR3.108 OMR
500+0.578 OMR2.888 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

STripFET II

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

16 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

38nC

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

6.2 mm

Height

2.4mm

Length

6.6mm

Automotive Standard

No

Product details

N-Channel STripFET™ II, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more