Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Typical Gate Charge Qg @ Vgs
12nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
855.500 OMR
0.342 OMR Each (On a Reel of 2500) (ex VAT)
898.275 OMR
0.359 OMR Each (On a Reel of 2500) (inc. VAT)
2500
855.500 OMR
0.342 OMR Each (On a Reel of 2500) (ex VAT)
898.275 OMR
0.359 OMR Each (On a Reel of 2500) (inc. VAT)
Stock information temporarily unavailable.
2500
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Package Type
TO-252
Series
STripFET
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Typical Gate Charge Qg @ Vgs
12nC
Forward Voltage Vf
1.1V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


