Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
5.336 OMR
0.534 OMR Each (In a Pack of 10) (ex VAT)
5.603 OMR
0.561 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
5.336 OMR
0.534 OMR Each (In a Pack of 10) (ex VAT)
5.603 OMR
0.561 OMR Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 40 | 0.534 OMR | 5.336 OMR |
| 50 - 90 | 0.505 OMR | 5.046 OMR |
| 100 - 240 | 0.458 OMR | 4.582 OMR |
| 250 - 490 | 0.452 OMR | 4.524 OMR |
| 500+ | 0.447 OMR | 4.466 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
40V
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
6mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
175°C
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


