Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
307.5nC
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Length
38.2mm
Height
9.1mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
170.868 OMR
17.087 OMR Each (In a Tube of 10) (ex VAT)
179.411 OMR
17.941 OMR Each (In a Tube of 10) (inc. VAT)
10
170.868 OMR
17.087 OMR Each (In a Tube of 10) (ex VAT)
179.411 OMR
17.941 OMR Each (In a Tube of 10) (inc. VAT)
Stock information temporarily unavailable.
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | 17.087 OMR | 170.868 OMR |
| 50 - 90 | 16.315 OMR | 163.154 OMR |
| 100 - 190 | 14.384 OMR | 143.840 OMR |
| 200 - 490 | 13.427 OMR | 134.270 OMR |
| 500+ | 12.661 OMR | 126.614 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
307.5nC
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Length
38.2mm
Height
9.1mm
Standards/Approvals
No
Automotive Standard
No
Product details


