STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF10NM60N

RS Stock No.: 168-7566Brand: STMicroelectronicsManufacturers Part No.: STF10NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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44.825 OMR

0.896 OMR Each (In a Tube of 50) (ex VAT)

47.066 OMR

0.941 OMR Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF10NM60N

44.825 OMR

0.896 OMR Each (In a Tube of 50) (ex VAT)

47.066 OMR

0.941 OMR Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220FP STF10NM60N

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 500.896 OMR44.825 OMR
100 - 2000.698 OMR34.925 OMR
250+0.638 OMR31.900 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more