Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
61.600 OMR
1.232 OMR Each (In a Tube of 50) (ex VAT)
64.680 OMR
1.294 OMR Each (In a Tube of 50) (inc. VAT)
50
61.600 OMR
1.232 OMR Each (In a Tube of 50) (ex VAT)
64.680 OMR
1.294 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | 1.232 OMR | 61.600 OMR |
100 - 450 | 1.023 OMR | 51.150 OMR |
500 - 950 | 0.996 OMR | 49.775 OMR |
1000 - 4950 | 0.968 OMR | 48.400 OMR |
5000+ | 0.957 OMR | 47.850 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Series
MDmesh
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.6mm
Length
10.4mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
16.4mm
Product details