STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

RS Stock No.: 168-7540Brand: STMicroelectronicsManufacturers Part No.: STF24NM60N
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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61.600 OMR

1.232 OMR Each (In a Tube of 50) (ex VAT)

64.680 OMR

1.294 OMR Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

61.600 OMR

1.232 OMR Each (In a Tube of 50) (ex VAT)

64.680 OMR

1.294 OMR Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220FP STF24NM60N

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 501.232 OMR61.600 OMR
100 - 4501.023 OMR51.150 OMR
500 - 9500.996 OMR49.775 OMR
1000 - 49500.968 OMR48.400 OMR
5000+0.957 OMR47.850 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Series

MDmesh

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

16.4mm

Product details

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more