Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
48.950 OMR
0.979 OMR Each (In a Tube of 50) (ex VAT)
51.398 OMR
1.028 OMR Each (In a Tube of 50) (inc. VAT)
50
48.950 OMR
0.979 OMR Each (In a Tube of 50) (ex VAT)
51.398 OMR
1.028 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 0.979 OMR | 48.950 OMR |
| 100 - 450 | 0.808 OMR | 40.425 OMR |
| 500 - 950 | 0.786 OMR | 39.325 OMR |
| 1000 - 4950 | 0.776 OMR | 38.775 OMR |
| 5000+ | 0.770 OMR | 38.500 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-220
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
190mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
46nC
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
30W
Maximum Gate Source Voltage Vgs
30 V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6 mm
Height
16.4mm
Automotive Standard
No
Product details


