Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
6.183 OMR
3.092 OMR Each (In a Pack of 2) (ex VAT)
6.492 OMR
3.247 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
6.183 OMR
3.092 OMR Each (In a Pack of 2) (ex VAT)
6.492 OMR
3.247 OMR Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | 3.092 OMR | 6.183 OMR |
| 10 - 98 | 3.068 OMR | 6.135 OMR |
| 100 - 498 | 3.038 OMR | 6.076 OMR |
| 500+ | 3.020 OMR | 6.040 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
28A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
MDmesh DM2
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
110mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
40W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
54nC
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
16.4mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


