Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
35W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
71nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
16.4mm
Length
10.4mm
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Stock information temporarily unavailable.
2.990 OMR
2.990 OMR Each (ex VAT)
3.140 OMR
3.140 OMR Each (inc. VAT)
Standard
1
2.990 OMR
2.990 OMR Each (ex VAT)
3.140 OMR
3.140 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | 2.990 OMR |
| 10 - 99 | 1.597 OMR |
| 100+ | 1.501 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Product Type
MOSFET
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
-25, +25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
35W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
71nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
16.4mm
Length
10.4mm
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.