Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-3PF
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
79W
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Width
5.7mm
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Stock information temporarily unavailable.
7.188 OMR
7.188 OMR Each (ex VAT)
7.547 OMR
7.547 OMR Each (inc. VAT)
Standard
1
7.188 OMR
7.188 OMR Each (ex VAT)
7.547 OMR
7.547 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | 7.188 OMR |
| 10+ | 4.975 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
58A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-3PF
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
143nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
79W
Maximum Operating Temperature
150°C
Height
26.7mm
Length
15.7mm
Standards/Approvals
No
Width
5.7mm
Automotive Standard
No
Country of Origin
Korea, Republic Of
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.