STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)

RS Stock No.: 204-9870Brand: STMicroelectronicsManufacturers Part No.: STGB50H65FB2
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Technical Document

Specifications

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

272 W

Number of Transistors

1

Package Type

D2PAK (TO-263)

Pin Count

3

Country of Origin

China

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1.180 OMR

Each (In a Pack of 5) (ex VAT)

1.239 OMR

Each (In a Pack of 5) (inc VAT)

STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
Select packaging type

1.180 OMR

Each (In a Pack of 5) (ex VAT)

1.239 OMR

Each (In a Pack of 5) (inc VAT)

STMicroelectronics STGB50H65FB2 IGBT, 86 A 650 V, 3-Pin D2PAK (TO-263)
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 451.180 OMR5.900 OMR
50 - 951.165 OMR5.825 OMR
100 - 2451.150 OMR5.750 OMR
250 - 4951.140 OMR5.700 OMR
500+1.130 OMR5.650 OMR

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

272 W

Number of Transistors

1

Package Type

D2PAK (TO-263)

Pin Count

3

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more