Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.7mm
Height
26.7mm
Standards/Approvals
ECOPACK
Series
V
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
3.839 OMR
1.920 OMR Each (In a Pack of 2) (ex VAT)
4.031 OMR
2.016 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
3.839 OMR
1.920 OMR Each (In a Pack of 2) (ex VAT)
4.031 OMR
2.016 OMR Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | 1.920 OMR | 3.839 OMR |
| 20 - 98 | 1.561 OMR | 3.122 OMR |
| 100 - 198 | 1.190 OMR | 2.380 OMR |
| 200+ | 1.070 OMR | 2.141 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.7mm
Height
26.7mm
Standards/Approvals
ECOPACK
Series
V
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
