STMicroelectronics STGFW30V60DF, Type N-Channel Trench Gate Field Stop IGBT, 60 A 600 V, 3-Pin TO-3PF, Through Hole
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.7mm
Height
26.7mm
Standards/Approvals
ECOPACK
Series
V
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
3.767 OMR
1.884 OMR Each (In a Pack of 2) (ex VAT)
3.955 OMR
1.978 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
3.767 OMR
1.884 OMR Each (In a Pack of 2) (ex VAT)
3.955 OMR
1.978 OMR Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | 1.884 OMR | 3.767 OMR |
| 10 - 18 | 1.794 OMR | 3.588 OMR |
| 20 - 48 | 1.615 OMR | 3.229 OMR |
| 50 - 98 | 1.453 OMR | 2.906 OMR |
| 100+ | 1.375 OMR | 2.751 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
60A
Product Type
Trench Gate Field Stop IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-3PF
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Length
15.7mm
Height
26.7mm
Standards/Approvals
ECOPACK
Series
V
Automotive Standard
No
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products