Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
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Stock information temporarily unavailable.
5.532 OMR
1.106 OMR Each (In a Pack of 5) (ex VAT)
5.809 OMR
1.161 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
5.532 OMR
1.106 OMR Each (In a Pack of 5) (ex VAT)
5.809 OMR
1.161 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | 1.106 OMR | 5.532 OMR |
| 10 - 20 | 1.064 OMR | 5.322 OMR |
| 25+ | 1.058 OMR | 5.292 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
IGBT
Maximum Continuous Collector Current Ic
40A
Maximum Collector Emitter Voltage Vceo
650V
Number of Transistors
1
Package Type
TO-220
Pin Count
3
Maximum Gate Emitter Voltage VGEO
20 V
Country of Origin
China
Product Details
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the Advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
