Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
HB
Length
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
2.978 OMR
1.489 OMR Each (In a Pack of 2) (ex VAT)
3.127 OMR
1.563 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
2.978 OMR
1.489 OMR Each (In a Pack of 2) (ex VAT)
3.127 OMR
1.563 OMR Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | 1.489 OMR | 2.978 OMR |
| 20 - 98 | 1.465 OMR | 2.930 OMR |
| 100 - 198 | 1.441 OMR | 2.882 OMR |
| 200+ | 1.280 OMR | 2.559 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
30A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
260W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2V
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
RoHS
Series
HB
Length
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
