Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Stock information temporarily unavailable.
5.298 OMR
2.649 OMR Each (In a Pack of 2) (ex VAT)
5.563 OMR
2.781 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
5.298 OMR
2.649 OMR Each (In a Pack of 2) (ex VAT)
5.563 OMR
2.781 OMR Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | 2.649 OMR | 5.298 OMR |
| 20 - 98 | 2.159 OMR | 4.318 OMR |
| 100 - 198 | 1.644 OMR | 3.289 OMR |
| 200+ | 1.477 OMR | 2.954 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
30A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
1200V
Maximum Power Dissipation Pd
220W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±25 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.75V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
14.8mm
Height
20.15mm
Standards/Approvals
ECOPACK, JEDEC JESD97
Width
15.75mm
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.