STMicroelectronics, Type N-Channel IGBT, 60 A 650 V, 4-Pin TO-247, Through Hole

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

• Designed for soft commutation only
• Maximum junction temperature: TJ = 175 °C
• VCE(sat) = 1.55 V (typ.) @ IC = 30 A
• Minimized tail current
• Tight parameter distribution
• Low thermal resistance
• Low drop voltage freewheeling co-packaged diode
• Positive VCE(sat) temperature coefficient