Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
10.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
3.608 OMR
1.804 OMR Each (In a Pack of 2) (ex VAT)
3.788 OMR
1.894 OMR Each (In a Pack of 2) (inc. VAT)
Standard
2
3.608 OMR
1.804 OMR Each (In a Pack of 2) (ex VAT)
3.788 OMR
1.894 OMR Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | 1.804 OMR | 3.608 OMR |
| 10 - 18 | 1.710 OMR | 3.421 OMR |
| 20 - 48 | 1.540 OMR | 3.080 OMR |
| 50 - 98 | 1.386 OMR | 2.772 OMR |
| 100+ | 1.326 OMR | 2.651 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Series
DeepGate, STripFET
Package Type
H2PAK-2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
10.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
4.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


