Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
57W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
1mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Stock information temporarily unavailable.
2.966 OMR
1.483 OMR Each (Supplied as a Tape) (ex VAT)
3.114 OMR
1.557 OMR Each (Supplied as a Tape) (inc. VAT)
Standard
2
2.966 OMR
1.483 OMR Each (Supplied as a Tape) (ex VAT)
3.114 OMR
1.557 OMR Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Tape |
|---|---|---|
| 2 - 18 | 1.483 OMR | 2.966 OMR |
| 20 - 98 | 1.304 OMR | 2.607 OMR |
| 100 - 198 | 1.166 OMR | 2.332 OMR |
| 200+ | 1.017 OMR | 2.033 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
710V
Package Type
PowerFLAT
Series
MDmesh M5
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
240mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
57W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
31nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
1mm
Length
5.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.