STMicroelectronics STripFET F3 N-Channel MOSFET, 20 A, 100 V, 8-Pin PowerFLAT 5 x 6 STL8N10LF3
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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7.425 OMR
0.742 OMR Each (In a Pack of 10) (ex VAT)
7.796 OMR
0.779 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
7.425 OMR
0.742 OMR Each (In a Pack of 10) (ex VAT)
7.796 OMR
0.779 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 20 | 0.742 OMR | 7.425 OMR |
| 30 - 90 | 0.720 OMR | 7.205 OMR |
| 100 - 490 | 0.566 OMR | 5.665 OMR |
| 500 - 990 | 0.451 OMR | 4.510 OMR |
| 1000+ | 0.440 OMR | 4.400 OMR |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
100 V
Series
STripFET F3
Package Type
PowerFLAT 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.15mm
Typical Gate Charge @ Vgs
20.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products