Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
Stock information temporarily unavailable.
7.595 OMR
0.759 OMR Each (In a Pack of 10) (ex VAT)
7.975 OMR
0.797 OMR Each (In a Pack of 10) (inc. VAT)
Standard
10
7.595 OMR
0.759 OMR Each (In a Pack of 10) (ex VAT)
7.975 OMR
0.797 OMR Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | 0.759 OMR | 7.595 OMR |
| 100 - 490 | 0.520 OMR | 5.203 OMR |
| 500+ | 0.425 OMR | 4.246 OMR |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
60V
Package Type
PowerFLAT
Series
STripFET F7
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
5.4mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
94W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Height
0.95mm
Length
5.4mm
Standards/Approvals
No
Width
6.35mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.