STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP

RS Stock No.: 920-8846Brand: STMicroelectronicsManufacturers Part No.: STP10NK70ZFP
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

700 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Height

16.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

58.850 OMR

1.177 OMR Each (In a Tube of 50) (ex VAT)

61.792 OMR

1.236 OMR Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP

58.850 OMR

1.177 OMR Each (In a Tube of 50) (ex VAT)

61.792 OMR

1.236 OMR Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 8.6 A, 700 V, 3-Pin TO-220FP STP10NK70ZFP
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 501.177 OMR58.850 OMR
100 - 4500.946 OMR47.300 OMR
500 - 9500.842 OMR42.075 OMR
1000 - 49500.715 OMR35.750 OMR
5000+0.698 OMR34.925 OMR

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

700 V

Series

MDmesh, SuperMESH

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

64 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Height

16.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more