Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
57.475 OMR
1.150 OMR Each (In a Tube of 50) (ex VAT)
60.349 OMR
1.207 OMR Each (In a Tube of 50) (inc. VAT)
50
57.475 OMR
1.150 OMR Each (In a Tube of 50) (ex VAT)
60.349 OMR
1.207 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 1.150 OMR | 57.475 OMR |
| 100 - 450 | 0.924 OMR | 46.200 OMR |
| 500 - 950 | 0.820 OMR | 40.975 OMR |
| 1000 - 4950 | 0.693 OMR | 34.650 OMR |
| 5000+ | 0.682 OMR | 34.100 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
700 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Product details


