Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
72nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
7.894 OMR
1.579 OMR Each (In a Pack of 5) (ex VAT)
8.289 OMR
1.658 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
7.894 OMR
1.579 OMR Each (In a Pack of 5) (ex VAT)
8.289 OMR
1.658 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 1.579 OMR | 7.894 OMR |
| 25 - 45 | 1.501 OMR | 7.505 OMR |
| 50 - 120 | 1.351 OMR | 6.757 OMR |
| 125 - 245 | 1.220 OMR | 6.100 OMR |
| 250+ | 1.154 OMR | 5.771 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-220
Series
STripFET H7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
7mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
72nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


