N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35.5 nC @ 10 V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
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1.540 OMR
Each (In a Pack of 5) (ex VAT)
1.617 OMR
Each (In a Pack of 5) (inc VAT)
5
1.540 OMR
Each (In a Pack of 5) (ex VAT)
1.617 OMR
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 1.540 OMR | 7.700 OMR |
| 25 - 45 | 1.445 OMR | 7.225 OMR |
| 50 - 120 | 1.370 OMR | 6.850 OMR |
| 125 - 245 | 1.295 OMR | 6.475 OMR |
| 250+ | 1.230 OMR | 6.150 OMR |
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35.5 nC @ 10 V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products