STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 3-Pin TO-220 STP3N80K5

RS Stock No.: 829-4436Brand: STMicroelectronicsManufacturers Part No.: STP3N80K5
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

800 V

Series

MDmesh K5, SuperMESH5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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4.538 OMR

0.908 OMR Each (In a Pack of 5) (ex VAT)

4.765 OMR

0.953 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 3-Pin TO-220 STP3N80K5
Select packaging type

4.538 OMR

0.908 OMR Each (In a Pack of 5) (ex VAT)

4.765 OMR

0.953 OMR Each (In a Pack of 5) (inc. VAT)

STMicroelectronics MDmesh K5, SuperMESH5 N-Channel MOSFET, 2.5 A, 800 V, 3-Pin TO-220 STP3N80K5

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
5 - 200.908 OMR4.538 OMR
25 - 450.864 OMR4.318 OMR
50 - 1200.776 OMR3.878 OMR
125 - 2450.704 OMR3.520 OMR
250+0.676 OMR3.382 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

800 V

Series

MDmesh K5, SuperMESH5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more