Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
30.797 OMR
0.616 OMR Each (In a Tube of 50) (ex VAT)
32.337 OMR
0.647 OMR Each (In a Tube of 50) (inc. VAT)
50
30.797 OMR
0.616 OMR Each (In a Tube of 50) (ex VAT)
32.337 OMR
0.647 OMR Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | 0.616 OMR | 30.797 OMR |
| 100 - 450 | 0.496 OMR | 24.817 OMR |
| 500 - 950 | 0.419 OMR | 20.930 OMR |
| 1000 - 4950 | 0.377 OMR | 18.837 OMR |
| 5000+ | 0.317 OMR | 15.847 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET II
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
14mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
15 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
35nC
Maximum Operating Temperature
175°C
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


