Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
33 V
Package Type
TO-220
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
3.169 OMR
0.634 OMR Each (In a Pack of 5) (ex VAT)
3.327 OMR
0.666 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
3.169 OMR
0.634 OMR Each (In a Pack of 5) (ex VAT)
3.327 OMR
0.666 OMR Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | 0.634 OMR | 3.169 OMR |
| 10 - 95 | 0.538 OMR | 2.691 OMR |
| 100 - 495 | 0.413 OMR | 2.063 OMR |
| 500 - 995 | 0.353 OMR | 1.764 OMR |
| 1000+ | 0.299 OMR | 1.495 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
33 V
Package Type
TO-220
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details


