Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Stock information temporarily unavailable.
1.041 OMR
1.041 OMR Each (ex VAT)
1.093 OMR
1.093 OMR Each (inc. VAT)
1
1.041 OMR
1.041 OMR Each (ex VAT)
1.093 OMR
1.093 OMR Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | 1.041 OMR |
| 10 - 99 | 0.730 OMR |
| 100 - 499 | 0.634 OMR |
| 500 - 999 | 0.622 OMR |
| 1000+ | 0.610 OMR |
Ideate. Create. Collaborate
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Silicon Carbide Schottky Diode
Series
STPSC
Rectifier Type
SiC Schottky
Pin Count
2
Peak Reverse Current Ir
170μA
Maximum Forward Voltage Vf
1.3V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
385A
Maximum Operating Temperature
175°C
Length
15.75mm
Height
4.6mm
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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JOIN FOR FREE
No hidden fees!
