Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Country of Origin
China
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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34.050 OMR
1.135 OMR Each (In a Tube of 30) (ex VAT)
35.752 OMR
1.192 OMR Each (In a Tube of 30) (inc. VAT)
30
34.050 OMR
1.135 OMR Each (In a Tube of 30) (ex VAT)
35.752 OMR
1.192 OMR Each (In a Tube of 30) (inc. VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 60 | 1.135 OMR | 34.050 OMR |
90 - 480 | 0.950 OMR | 28.500 OMR |
510 - 960 | 0.850 OMR | 25.500 OMR |
990 - 4980 | 0.800 OMR | 24.000 OMR |
5010+ | 0.690 OMR | 20.700 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Width
5.15mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
20.15mm
Country of Origin
China
Product details