Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
74.250 OMR
2.475 OMR Each (In a Tube of 30) (ex VAT)
77.962 OMR
2.599 OMR Each (In a Tube of 30) (inc. VAT)
30
74.250 OMR
2.475 OMR Each (In a Tube of 30) (ex VAT)
77.962 OMR
2.599 OMR Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 60 | 2.475 OMR | 74.250 OMR |
| 90 - 480 | 2.052 OMR | 61.545 OMR |
| 510 - 960 | 1.810 OMR | 54.285 OMR |
| 990+ | 1.578 OMR | 47.355 OMR |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
105 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
84 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Height
20.15mm
Product details


