Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
130A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
363nC
Maximum Power Dissipation Pd
625W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
15.9mm
Height
20.3mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
539.456 OMR
17.982 OMR Each (In a Tube of 30) (ex VAT)
566.429 OMR
18.881 OMR Each (In a Tube of 30) (inc. VAT)
30
539.456 OMR
17.982 OMR Each (In a Tube of 30) (ex VAT)
566.429 OMR
18.881 OMR Each (In a Tube of 30) (inc. VAT)
Stock information temporarily unavailable.
30
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
130A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
17mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
363nC
Maximum Power Dissipation Pd
625W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Length
15.9mm
Height
20.3mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


