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Texas Instruments NexFET N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP CSD16321Q5

RS Stock No.: 162-8526Brand: Texas InstrumentsManufacturers Part No.: CSD16321Q5
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.05mm

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

1,194.375 OMR

0.478 OMR Each (On a Reel of 2500) (ex VAT)

1,254.094 OMR

0.502 OMR Each (On a Reel of 2500) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP CSD16321Q5

1,194.375 OMR

0.478 OMR Each (On a Reel of 2500) (ex VAT)

1,254.094 OMR

0.502 OMR Each (On a Reel of 2500) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP CSD16321Q5
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Width

5.1mm

Length

6.1mm

Typical Gate Charge @ Vgs

14 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.05mm

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more