Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
97 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
6.8 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
2.942 OMR
0.588 OMR Each (In a Pack of 5) (ex VAT)
3.089 OMR
0.617 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
2.942 OMR
0.588 OMR Each (In a Pack of 5) (ex VAT)
3.089 OMR
0.617 OMR Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | 0.588 OMR | 2.942 OMR |
| 25 - 45 | 0.561 OMR | 2.805 OMR |
| 50 - 120 | 0.528 OMR | 2.640 OMR |
| 125 - 245 | 0.506 OMR | 2.530 OMR |
| 250+ | 0.495 OMR | 2.475 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
97 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
6.8 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Product details


