Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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1.010 OMR
Each (Supplied on a Reel) (ex VAT)
1.060 OMR
Each (Supplied on a Reel) (inc VAT)
5
1.010 OMR
Each (Supplied on a Reel) (ex VAT)
1.060 OMR
Each (Supplied on a Reel) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | 1.010 OMR | 5.050 OMR |
25 - 45 | 0.960 OMR | 4.800 OMR |
50 - 120 | 0.865 OMR | 4.325 OMR |
125 - 245 | 0.780 OMR | 3.900 OMR |
250+ | 0.745 OMR | 3.725 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Product details