Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B

RS Stock No.: 827-4870Brand: Texas InstrumentsManufacturers Part No.: CSD18502Q5B
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

6.160 OMR

1.232 OMR Each (In a Pack of 5) (ex VAT)

6.468 OMR

1.294 OMR Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Select packaging type

6.160 OMR

1.232 OMR Each (In a Pack of 5) (ex VAT)

6.468 OMR

1.294 OMR Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP CSD18502Q5B
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
5 - 201.232 OMR6.160 OMR
25 - 451.172 OMR5.858 OMR
50 - 1201.056 OMR5.280 OMR
125 - 2450.952 OMR4.758 OMR
250+0.913 OMR4.565 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.05mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more