Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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0.475 OMR
Each (In a Pack of 5) (ex VAT)
0.499 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
0.475 OMR
Each (In a Pack of 5) (ex VAT)
0.499 OMR
Each (In a Pack of 5) (inc. VAT)
Standard
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | 0.475 OMR | 2.375 OMR |
25 - 45 | 0.455 OMR | 2.275 OMR |
50 - 120 | 0.410 OMR | 2.050 OMR |
125 - 245 | 0.375 OMR | 1.875 OMR |
250+ | 0.365 OMR | 1.825 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
40 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
7.7 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details