N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

RS Stock No.: 145-1334Brand: Texas InstrumentsManufacturers Part No.: CSD19534KCS
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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0.490 OMR

Each (In a Tube of 50) (ex VAT)

0.514 OMR

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS

0.490 OMR

Each (In a Tube of 50) (ex VAT)

0.514 OMR

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 500.490 OMR24.500 OMR
100 - 2000.440 OMR22.000 OMR
250 - 4500.415 OMR20.750 OMR
500 - 7000.395 OMR19.750 OMR
750+0.375 OMR18.750 OMR

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

NexFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

118 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.67mm

Typical Gate Charge @ Vgs

17.1 nC @ 0 V

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.1V

Height

16.51mm

Minimum Operating Temperature

-55 °C

Country of Origin

Philippines

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more