N-Channel MOSFET, 53 A, 100 V, 8-Pin VSON-CLIP Texas Instruments CSD19537Q3T
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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0.600 OMR
Each (In a Pack of 5) (ex VAT)
0.630 OMR
Each (In a Pack of 5) (inc VAT)
5
0.600 OMR
Each (In a Pack of 5) (ex VAT)
0.630 OMR
Each (In a Pack of 5) (inc VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 10 | 0.600 OMR | 3.000 OMR |
15 - 45 | 0.535 OMR | 2.675 OMR |
50 - 245 | 0.445 OMR | 2.225 OMR |
250 - 495 | 0.360 OMR | 1.800 OMR |
500+ | 0.325 OMR | 1.625 OMR |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
100 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
44 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Product details