Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-10 A
Maximum Collector Emitter Voltage
-140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
8.855 OMR
0.886 OMR Each (In a Pack of 10) (ex VAT)
9.298 OMR
0.930 OMR Each (In a Pack of 10) (inc. VAT)
10
8.855 OMR
0.886 OMR Each (In a Pack of 10) (ex VAT)
9.298 OMR
0.930 OMR Each (In a Pack of 10) (inc. VAT)
10
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | 0.886 OMR | 8.855 OMR |
50 - 240 | 0.858 OMR | 8.580 OMR |
250 - 490 | 0.842 OMR | 8.415 OMR |
500 - 990 | 0.825 OMR | 8.250 OMR |
1000+ | 0.820 OMR | 8.195 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-10 A
Maximum Collector Emitter Voltage
-140 V
Package Type
TO-3PN
Mounting Type
Through Hole
Maximum Power Dissipation
100 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
140 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
19 x 15.9 x 4.8mm
Country of Origin
Japan
Product details