Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.5 x 5.2 x 26mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
PNP Power Transistors, Toshiba
Bipolar Transistors, Toshiba
1.397 OMR
1.397 OMR Each (ex VAT)
1.467 OMR
1.467 OMR Each (inc. VAT)
Standard
1
1.397 OMR
1.397 OMR Each (ex VAT)
1.467 OMR
1.467 OMR Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Quantity | Unit price |
---|---|
1 - 24 | 1.397 OMR |
25 - 99 | 1.089 OMR |
100 - 249 | 1.072 OMR |
250 - 499 | 1.067 OMR |
500+ | 1.056 OMR |
Technical Document
Specifications
Brand
ToshibaTransistor Type
PNP
Maximum DC Collector Current
-15 A
Maximum Collector Emitter Voltage
-230 V
Package Type
TO-3PL
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
55
Transistor Configuration
Single
Maximum Collector Base Voltage
-230 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
20.5 x 5.2 x 26mm
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details