Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
1.238 OMR
0.050 OMR Each (In a Pack of 25) (ex VAT)
1.300 OMR
0.052 OMR Each (In a Pack of 25) (inc. VAT)
25
1.238 OMR
0.050 OMR Each (In a Pack of 25) (ex VAT)
1.300 OMR
0.052 OMR Each (In a Pack of 25) (inc. VAT)
25
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Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
300 mA
Maximum Collector Emitter Voltage
20 V
Package Type
SOT-346 (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
200
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
25 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.5 x 1.1mm
Maximum Operating Temperature
+125 °C
Country of Origin
Japan
Product details


